In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...
New MOSFET transistors come packaged in a land grid array (LGA) that reduces board space by up to 40% when compared with chip-scale packaging, according to Texas Instruments. New MOSFET transistors ...
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