Around 500 patent families were published in the power GaN patent landscape during Q2 2026, and approximately 300 patent families received a grant for the first time. At the individual patent level, ...
Renesas has expanded its GaN portfolio into low-voltage applications with its first family of 100V enhancement mode (E-mode) GaN-based discrete power transistors.
A wide range of devices should benefit from the team’s process that realises a specific contact resistance of just 1-3 x 10 -4 Ω cm 2. This ultra-low resistance reduces operating voltage, boosts ...
Helping address the low efficiency in green LEDs are V-defects. These hexagonal pyramid-shaped depressions, containing six semipolar sidewalls that typically form at the apex of threading dislocations ...
Next-generation wireless communication systems will benefit from heterogeneous monolithic integration of InGaAs HEMTs and GaN HEMTs on silicon CMOS chips.
Navitas Semiconductor and Microchip Technology have collaborated on a 800V DC-to-6V DC reference design for AI data centre rack power applications.
Northrop Grumman has announced the FORTITUDE device; a single, grain-of-rice–sized GaN chip that is said solve the problem of moving massive amounts of information quickly, cleanly and reliably in ...
KnowMade has announced the Q2 2026 update of its RF GaN Technology Patent Monitor. More than 110 new patent families were published during the quarter, with Chinese entities accounting for more than ...
At European Microwave Week (EuMW) October 4-9, ExCel in London, Keysight will demonstrate a range of solutions to help engineers accelerate RF and microwave innovation across industries including ...
ERZIA, a European specialist in GaAs and GaN RF and microwave solutions, has upgraded the environmental ratings across its entire New Space (-NS) amplifier line. Visitors to European Microwave Week ...
Devices produced by Zhou and co-workers are strong on a number of fronts – they combine the exceptional switching performance and power density that GaN is renowned for with a level of fault ...
Tyndall team unlocks the potential of 6G by integrating hBN memristor switches onto GaN MMICs Researchers at Tyndall National Institute have contributed to a major international breakthrough, ...
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