The axial-leaded devices combine 6, 8 and 10 kA surge ratings with stable clamping and MIL-STD-750 screening for demanding ...
The dual SiC MOSFET module combines an 800 A drain-current rating with a 300 kA²s diode I²t rating for demanding power ...
Virtual synchronous machines make inverters emulate synchronous generators; SYNDEM architecture scales this approach to 108 ...
Infineon's PSOC C3 Performance Line adds a PPCA accelerator enabling switching frequencies up to 2 MHz for GaN-based power ...
The collaboration combines digital control with GaN and SiC technologies to address efficiency and power-density requirements ...
The DF150 operates from -46°C to +60°C and combines 91% efficiency with IP67 protection for demanding power applications.
The four devices combine 0.2 mA typical channel current with 25 Mbps data rates, 30 kV/μs CMTI and 3,000 Vrms isolation.
Microchip's Kevin Speer explains why silicon carbide makes solid-state transformers practical for AI data center power.
Solid-state circuit breakers (SSCBs) have many advantages over mechanical breakers. While silicon carbide (SiC)-based SSCBs ...
From HVDC converters to solid-state transformers, advanced power electronics are driving T&D grid modernization.
The ALATTIS program targets a domestic manufacturing process for 10kV SiC IGBTs and PiN diodes for high-power applications. Navitas Semiconductor has been selected for the ALATTIS (Accelerated, ...
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