STMicroelectronics’ STGAP3S family of gate drivers for SiC and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection and flexible ...

Stellantis N.V. and Infineon Technologies will work jointly on the power architecture for Stellantis’ electric vehicles to ...

The research revealed that power systems with higher WD-RES penetration did not exhibit more blackout vulnerability and when blackouts did occur they were likely to have reduced intensity (as ...

Vishay Intertechnology has expanded its Gen 7 platform of 1200 V FRED Pt Hyperfast rectifiers with four new Automotive Grade devices in the eSMP series SMF (DO-219AB) package.

The Crescendo platform – a scalable on-demand vertical power architecture for upwards of 3,000A power domains – integrates all power components in a single device thin enough to relocate underneath ...

Navitas Semiconductor has announced what it claims is the world’s first 8.5 kW power supply unit (PSU), powered by GaN and SiC technologies to achieve 98 percent efficiency, for next-generation AI and ...

UK-based Cambridge GaN Devices (CGD), formed in 2016, will exhibit at Electronica (November 12-15, Munich, Germany) for the second time in the company's history.

Toshiba Electronics Europe will be showing its semiconductor, battery, data storage, and ceramic substrate products at electronica 2024 in Munich, Germany, from November 12th to 15th 2024.

Ryan Zrno, CEO of JST, discusses the ways in which the company, and the semiconductor industry more generally, is responding to the need to ensure more sustainable manufacturing alongside providing ...